Multi-carrier transport in ZrTe<sub>5</sub> film<xref rid="cpb_27_8_087307fn1" ref-type="fn">*</xref><fn id="cpb_27_8_087307fn1"><label>*</label><p>Project supported by Guangdong Innovative and Entrepreneurial Research Team Program (Grant No. 2016ZT06D348) and Shenzhen Peacock Program (Grant No. KQTD2016022619565991).</p></fn>

Multi-carrier transport in ZrTe₅ film**

Project supported by Guangdong Innovative and Entrepreneurial Research Team Program (Grant No. 2016ZT06D348) and Shenzhen Peacock Program (Grant No. KQTD2016022619565991).

Tang Fangdong^{1, 2}, Wang Peipei², Wang Peng², Gan Yuan², Wang Le^{1, †}, Zhang Wei¹, Zhang Liyuan²

(color online) The gate voltage modulated magnetotransport at 1.5 K. (a) The MR and Hall resistance of the 80-nm sample. (b) The Landau plot of the SdH oscillations, indicating the nontrivial Berry phase. The inset represents the Landau levels at different gate voltages. (c) and (d) The p-type gate effect of MR and the Hall resistance at different magnetic field strengths for the 31-nm sample.