Multi-carrier transport in ZrTe<sub>5</sub> film<xref rid="cpb_27_8_087307fn1" ref-type="fn">*</xref><fn id="cpb_27_8_087307fn1"><label>*</label><p>Project supported by Guangdong Innovative and Entrepreneurial Research Team Program (Grant No. 2016ZT06D348) and Shenzhen Peacock Program (Grant No. KQTD2016022619565991).</p></fn>

Multi-carrier transport in ZrTe₅ film**

Project supported by Guangdong Innovative and Entrepreneurial Research Team Program (Grant No. 2016ZT06D348) and Shenzhen Peacock Program (Grant No. KQTD2016022619565991).

Tang Fangdong^{1, 2}, Wang Peipei², Wang Peng², Gan Yuan², Wang Le^{1, †}, Zhang Wei¹, Zhang Liyuan²

(color online) (a) The gate voltage modulated longitudinal conductivity of the 15-nm ZrTe₅ films at different temperatures. The results show a peak near 60 V at 3.6 K. (b) The field effect mobility of the dominated hole type carriers and the carrier density as estimated using the Drude model. (c) The corresponding temperature-dependent longitudinal resistivity at different voltages displays the movement of T_p. (d) T_p moves to a lower temperature with an increase in electrons doping, indicating the easy modulation due to the external doping level.