Multi-carrier transport in ZrTe<sub>5</sub> film<xref rid="cpb_27_8_087307fn1" ref-type="fn">*</xref><fn id="cpb_27_8_087307fn1"><label>*</label><p>Project supported by Guangdong Innovative and Entrepreneurial Research Team Program (Grant No. 2016ZT06D348) and Shenzhen Peacock Program (Grant No. KQTD2016022619565991).</p></fn>

Multi-carrier transport in ZrTe₅ film**

Project supported by Guangdong Innovative and Entrepreneurial Research Team Program (Grant No. 2016ZT06D348) and Shenzhen Peacock Program (Grant No. KQTD2016022619565991).

Tang Fangdong^{1, 2}, Wang Peipei², Wang Peng², Gan Yuan², Wang Le^{1, †}, Zhang Wei¹, Zhang Liyuan²

(color online) Temperature-dependent magneto-transport of the 28-nm ZrTe₅ film. (a) and (b) The longitudinal and transverse magneto-resistance of ZrTe₅ from 1.5 K to 200 K. Well-defined SdH oscillations are observed in the low field (< 4 T), and the Hall anomaly indicates two types of carriers. (c) The amplitude of the SdH oscillations at different temperatures after subtracting a high temperature background of 15 K, and the Zeeman splitting implies well-resolved Landau levels. (d) The Landau–Fan diagram of ZrTe₅ films for different thickness values. The decrease in the slope indicates a reduction in the electron density. The zero intercepts demonstrate the nontrivial Berry phase. The insert represents the fit of the effective cyclotron mass (0.057 m_e) in the ac plane. (e) Two-carrier model fits of the Hall conductivity at 1.5 K, 60 K, and 200 K respectively. (f) The Kohler plot of MR at different temperatures, indicating hole dominating transport above 100 K and multi-carrier transport at low temperature.