Multi-carrier transport in ZrTe5 film*

Project supported by Guangdong Innovative and Entrepreneurial Research Team Program (Grant No. 2016ZT06D348) and Shenzhen Peacock Program (Grant No. KQTD2016022619565991).

Tang Fangdong1, 2, Wang Peipei2, Wang Peng2, Gan Yuan2, Wang Le1, †, Zhang Wei1, Zhang Liyuan2
       

(color online) (a) Some selected Hall resistance measurements for different thickness values of ZrTe5 films at 1.5 K. The plots display a “suspected” thickness-tuned band transition from electron type to hole type when the thickness is reduced. The Hall anomaly indicates the multi-carrier transport. (b) Some examples of “irregular” thickness-dependent Hall resistance, largely depending on the sample quality. (c) A comparison of the magneto-resistance and Hall resistance of the same sample measured over a one-week interval. The sample was stored in a glove box with an argon atmosphere. Other samples also display a similar decay behavior.