Multi-carrier transport in ZrTe<sub>5</sub> film<xref rid="cpb_27_8_087307fn1" ref-type="fn">*</xref><fn id="cpb_27_8_087307fn1"><label>*</label><p>Project supported by Guangdong Innovative and Entrepreneurial Research Team Program (Grant No. 2016ZT06D348) and Shenzhen Peacock Program (Grant No. KQTD2016022619565991).</p></fn>

Multi-carrier transport in ZrTe₅ film**

Project supported by Guangdong Innovative and Entrepreneurial Research Team Program (Grant No. 2016ZT06D348) and Shenzhen Peacock Program (Grant No. KQTD2016022619565991).

Tang Fangdong^{1, 2}, Wang Peipei², Wang Peng², Gan Yuan², Wang Le^{1, †}, Zhang Wei¹, Zhang Liyuan²

(color online) Thickness dependence of resistance anomaly temperature in ZrTe₅ films. (a) The temperature dependence of the resistivity of bulk ZrTe₅. The resistance anomaly temperature (T_p) is approximately 140.1 K. (b) Some selected R–T curves of thickness ranging from 13 nm to 100 nm. (c) Systematic statics of the thickness-dependent T_p transition. The observed tendency is an initial decrease followed by an increase that is largely sample-dependent, indicating the extreme sensitivity of thin samples.