Quantum spin Hall insulators in chemically functionalized As (110) and Sb (110) films<xref rid="cpb_27_8_087305fn1" ref-type="fn">*</xref><fn id="cpb_27_8_087305fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 11474197, U1632272, and 11521404).</p></fn>

Quantum spin Hall insulators in chemically functionalized As (110) and Sb (110) films**

Project supported by the National Natural Science Foundation of China (Grant Nos. 11474197, U1632272, and 11521404).

Wang Xiahong¹, Li Ping¹, Ran Zhao¹, Luo Weidong^{1, 2, 3, †}

(color online) (a) Plots of energy gap versus SOC strength ratio (λ/λ₀), with λ and λ₀ representing the tuned SOC strength and the natural SOC strength respectively. (b) Plots of energy gap of As–Cl and Sb–Cl with SOC versus in-plane strain. Red empty circle and blue empty square represent As–Cl and Sb–Cl respectively.