Investigations on mesa width design for 4H–SiC trench super junction Schottky diodes Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400502) and the National Natural Science Foundation of China (Grant Nos. U1766222 and 51777187). |
Simulated breakdown voltage versus (a) p-type doping variation and (b) charge imbalance percentage for varying mesa widths |