Investigations on mesa width design for 4H–SiC trench super junction Schottky diodes*

Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400502) and the National Natural Science Foundation of China (Grant Nos. U1766222 and 51777187).

Zhong Xue-Qian2, Wang Jue1, †, Wang Bao-Zhu2, Wang Heng-Yu2, Guo Qing2, Sheng Kuang2
       

Simulated breakdown voltage versus (a) p-type doping variation and (b) charge imbalance percentage for varying mesa widths