Investigations on mesa width design for 4H–SiC trench super junction Schottky diodes*

Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400502) and the National Natural Science Foundation of China (Grant Nos. U1766222 and 51777187).

Zhong Xue-Qian2, Wang Jue1, †, Wang Bao-Zhu2, Wang Heng-Yu2, Guo Qing2, Sheng Kuang2
       

2D electric field and electric field distributions along critical paths at BVmax for structures with (a) WM = 1.2 μm, (b) WM = 2 μm, and (c) WM = 2.8 μm.