Investigations on mesa width design for 4H–SiC trench super junction Schottky diodes<xref rid="cpb_27_8_087102fn1" ref-type="fn">*</xref> <fn id="cpb_27_8_087102fn1"><label>*</label> <p>Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400502) and the National Natural Science Foundation of China (Grant Nos. U1766222 and 51777187).</p></fn>

Investigations on mesa width design for 4H–SiC trench super junction Schottky diodes* *

Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400502) and the National Natural Science Foundation of China (Grant Nos. U1766222 and 51777187).

Zhong Xue-Qian², Wang Jue^{1, †}, Wang Bao-Zhu², Wang Heng-Yu², Guo Qing², Sheng Kuang²

(color online) (a) The 2D electric field distribution at BV, and (b) the electric field distributions along the border of p-type sidewall region (a–a′) and the middle of n-type mesa region (b–b′) for structure with W_M = 2 μm at three different charge compensation cases.