Investigations on mesa width design for 4H–SiC trench super junction Schottky diodes*

Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400502) and the National Natural Science Foundation of China (Grant Nos. U1766222 and 51777187).
Zhong Xue-Qian2, Wang Jue1, †, Wang Bao-Zhu2, Wang Heng-Yu2, Guo Qing2, Sheng Kuang2
       

The SEM images of three typical WT situations, (a) target WT (WT = 3 μm), (b) narrower WT (WT = 2.6 μm), and (c) wider WT (WT = 3.4 μm). The cell pitches are fixed at 5 μm.