Investigations on mesa width design for 4H–SiC trench super junction Schottky diodes<xref rid="cpb_27_8_087102fn1" ref-type="fn">*</xref> <fn id="cpb_27_8_087102fn1"><label>*</label> <p>Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400502) and the National Natural Science Foundation of China (Grant Nos. U1766222 and 51777187).</p></fn>

Investigations on mesa width design for 4H–SiC trench super junction Schottky diodes* *

Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400502) and the National Natural Science Foundation of China (Grant Nos. U1766222 and 51777187).

Zhong Xue-Qian², Wang Jue^{1, †}, Wang Bao-Zhu², Wang Heng-Yu², Guo Qing², Sheng Kuang²

(color online) The sidewall doping profile and electric field at breakdown for (a) W_T = 3.4 μm and (b) W_T = 2.6 μm, for the structure with target W_M of 2 μm, where the cell pitch is fixed at 5 μm.