The properties of surface nanobubbles formed on different substrates*

Project supported by the National Natural Science Foundation of China (Grant Nos. 11290165, 11305252, and U1532260), the Knowledge Innovation Program of the Chinese Academy of Sciences, China (Grant No. KJZD-EW-M03), and the Key Research Program of Frontier Sciences, Chinese Academy of Sciences, China (Grant No. QYZDJ-SSW-SLH019).

Zou Zheng-Lei1, 3, Quan Nan-Nan1, 3, Wang Xing-Ya3, 4, Wang Shuo2, 4, Zhou Li-Min2, 4, Hu Jun2, Zhang Li-Juan3, †, Dong Ya-Ming1, ‡
       

(color online) TM-AFM images of (a) HOPG, (b) DTS modified silicon, and (c) OTS modified silicon in air. The root-mean-square (RMS) roughnesses of the surface of panels (a), (b), and (c) are 0.7 nm, 0.37 nm, and 0.45 nm, respectively. Scan size is 5 μm ×5 μm, and the data scale is 10 nm.