The properties of surface nanobubbles formed on different substrates Project supported by the National Natural Science Foundation of China (Grant Nos. 11290165, 11305252, and U1532260), the Knowledge Innovation Program of the Chinese Academy of Sciences, China (Grant No. KJZD-EW-M03), and the Key Research Program of Frontier Sciences, Chinese Academy of Sciences, China (Grant No. QYZDJ-SSW-SLH019). |
(color online) TM-AFM images of (a) HOPG, (b) DTS modified silicon, and (c) OTS modified silicon in air. The root-mean-square (RMS) roughnesses of the surface of panels (a), (b), and (c) are 0.7 nm, 0.37 nm, and 0.45 nm, respectively. Scan size is 5 μm ×5 μm, and the data scale is 10 nm. |