Unconventional lattice dynamics in few-layer h-BN and indium iodide crystals<xref rid="cpb_27_8_086301_fn1" ref-type="fn">*</xref><fn id="cpb_27_8_086301_fn1"><label>*</label><p>Project supported by the Major Program of Aerospace Advanced Manufacturing Technology Research Foundation from NSFC and CASC, China (Grant No. U1537204), the National Key Research and Development Program of China (Grant No. 2017YFA0206301), and the National Natural Science Foundation of China (Grant No. 51702146).</p></fn>

Unconventional lattice dynamics in few-layer h-BN and indium iodide crystals**

Project supported by the Major Program of Aerospace Advanced Manufacturing Technology Research Foundation from NSFC and CASC, China (Grant No. U1537204), the National Key Research and Development Program of China (Grant No. 2017YFA0206301), and the National Natural Science Foundation of China (Grant No. 51702146).

Hu Gan^{1, 2}, Huang Jian-Qi^{1, 2}, Wang Ya-Ning^{1, 2}, Yang Teng^{1, 2, †}, Dong Bao-Juan^{1, 2}, Wang Ji-Zhang^{1, 2}, Zhao Bo³, Ali Sajjad^{1, 2}, Zhang Zhi-Dong^{1, 2}

(color online) (a) and (c) Calculated N-dependent Raman spectra. The line-width used is 0.20 cm⁻¹. Green dashed frame in panel (a) and dashed arrow in panel (c) highlight the typical out-of-plane A_g mode and in-plane B_g mode, respectively. Raman shift and intensity of (b) A_g and (d) B_g modes as a function of inverse layer number 1/N of InI crystal. A black dashed curve in panel (b) is a fit to ω(1/N) data. To note that logarithmic scale is used for intensity in panels (b) an (d).