Unconventional lattice dynamics in few-layer h-BN and indium iodide crystals<xref rid="cpb_27_8_086301_fn1" ref-type="fn">*</xref><fn id="cpb_27_8_086301_fn1"><label>*</label><p>Project supported by the Major Program of Aerospace Advanced Manufacturing Technology Research Foundation from NSFC and CASC, China (Grant No. U1537204), the National Key Research and Development Program of China (Grant No. 2017YFA0206301), and the National Natural Science Foundation of China (Grant No. 51702146).</p></fn>

Unconventional lattice dynamics in few-layer h-BN and indium iodide crystals**

Project supported by the Major Program of Aerospace Advanced Manufacturing Technology Research Foundation from NSFC and CASC, China (Grant No. U1537204), the National Key Research and Development Program of China (Grant No. 2017YFA0206301), and the National Natural Science Foundation of China (Grant No. 51702146).

Hu Gan^{1, 2}, Huang Jian-Qi^{1, 2}, Wang Ya-Ning^{1, 2}, Yang Teng^{1, 2, †}, Dong Bao-Juan^{1, 2}, Wang Ji-Zhang^{1, 2}, Zhao Bo³, Ali Sajjad^{1, 2}, Zhang Zhi-Dong^{1, 2}

(color online) Calculated Raman shift and intensity of the E_2g mode as a function of layer number N of h-BN crystal. The inset shows the layer number dependence of both the peak intensity and frequency change Δω. Δω(N) is defined as the frequency difference between N-layer ω(N) and bulk ω(∞). Raman intensity I(N) is normalized by the Raman intensity at N = 4. Experimental data in blue filled circle are compared with the calculated ones in red filled square. The line-width of 12.00 cm⁻¹ is used.