Unconventional lattice dynamics in few-layer h-BN and indium iodide crystals<xref rid="cpb_27_8_086301_fn1" ref-type="fn">*</xref><fn id="cpb_27_8_086301_fn1"><label>*</label><p>Project supported by the Major Program of Aerospace Advanced Manufacturing Technology Research Foundation from NSFC and CASC, China (Grant No. U1537204), the National Key Research and Development Program of China (Grant No. 2017YFA0206301), and the National Natural Science Foundation of China (Grant No. 51702146).</p></fn>

Unconventional lattice dynamics in few-layer h-BN and indium iodide crystals**

Project supported by the Major Program of Aerospace Advanced Manufacturing Technology Research Foundation from NSFC and CASC, China (Grant No. U1537204), the National Key Research and Development Program of China (Grant No. 2017YFA0206301), and the National Natural Science Foundation of China (Grant No. 51702146).

Hu Gan^{1, 2}, Huang Jian-Qi^{1, 2}, Wang Ya-Ning^{1, 2}, Yang Teng^{1, 2, †}, Dong Bao-Juan^{1, 2}, Wang Ji-Zhang^{1, 2}, Zhao Bo³, Ali Sajjad^{1, 2}, Zhang Zhi-Dong^{1, 2}

(color online) (a) Phonon dispersion relation of monolayer and bulk h-BN crystal. Black lines are from DFPT calculation, and red line of the ZA mode is a fit by the force constant model. (b) E_2g mode and its splitting as a function of layer number N. The frequency value is written in bracket.