Influences of total ionizing dose on single event effect sensitivity in floating gate cells<xref rid="cpb_27_8_086103_fn1" ref-type="fn">*</xref><fn id="cpb_27_8_086103_fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 11690041, 11675233, U1532261, and 11505243).</p></fn>

Influences of total ionizing dose on single event effect sensitivity in floating gate cells**

Project supported by the National Natural Science Foundation of China (Grant Nos. 11690041, 11675233, U1532261, and 11505243).

Yin Ya-Nan^{1, 2}, Liu Jie^{1, †}, Ji Qing-Gang^{1, 2}, Zhao Pei-Xiong^{1, 2}, Liu Tian-Qi^{1, 2, 3}, Ye Bing¹, Luo Jie^{1, 2, 3}, Sun You-Mei¹, Hou Ming-Dong¹

(color online) Plots of cross section of retention errors in 25-nm NAND memories versus time after programming under different LET ion exposures in fresh samples and in samples ever exposed to TID, with a vertical arrow indicating that no errors have been observed, at ion LETs: (a) 20.7 MeV⋅cm²/mg, (b) 29.1 MeV⋅cm²/mg, (c) 67.1 MeV⋅cm²/mg, and (d) 99.8 MeV⋅cm²/mg.