Synthesis of thermally stable HfOxNy as gate dielectric for AlGaN/GaN heterostructure field-effect transistors*

Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0403000).

Zhang Tong1, Pu Taofei1, Xie Tian1, Li Liuan2, †, Bu Yuyu3, Wang Xiao3, Ao Jin-Ping1, 3, ‡
       

(color online) (a) The output characteristic of the HfOxNy MOS HFETs before and after annealing, and (b) the gate leakage annealed at different temperatures.