Synthesis of thermally stable HfOxNy as gate dielectric for AlGaN/GaN heterostructure field-effect transistors<xref rid="cpb_27_7_078503_fn1" ref-type="fn">*</xref> <fn id="cpb_27_7_078503_fn1"> <label>*</label> Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0403000). </fn>

Synthesis of thermally stable HfO_xN_y as gate dielectric for AlGaN/GaN heterostructure field-effect transistors* *

Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0403000).

Zhang Tong¹, Pu Taofei¹, Xie Tian¹, Li Liuan^{2, †}, Bu Yuyu³, Wang Xiao³, Ao Jin-Ping^{1, 3, ‡}

(color online) The 5 μm × 5 μm scaled surface morphology of the as-grown films with O₂ flow rate of (a) 0 sccm, (b) 1 sccm, (c) 3 sccm, and (d) 5 sccm.