Synthesis of thermally stable HfOxNy as gate dielectric for AlGaN/GaN heterostructure field-effect transistors<xref rid="cpb_27_7_078503_fn1" ref-type="fn">*</xref> <fn id="cpb_27_7_078503_fn1"> <label>*</label> Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0403000). </fn>

Synthesis of thermally stable HfO_xN_y as gate dielectric for AlGaN/GaN heterostructure field-effect transistors* *

Project supported by the National Key Research and Development Program of China (Grant No. 2017YFB0403000).

Zhang Tong¹, Pu Taofei¹, Xie Tian¹, Li Liuan^{2, †}, Bu Yuyu³, Wang Xiao³, Ao Jin-Ping^{1, 3, ‡}

(color online) (a) The output characteristic of the HfO₂ MOS HFETs before and after annealing, and (b) the gate leakage annealed at different temperatures.