Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric<xref rid="cpb_27_7_078502_fn1" ref-type="fn">*</xref> <fn id="cpb_27_7_078502_fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant Nos. 61574109 and 61204092).</p> </fn>

Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric* *

Project supported by the National Natural Science Foundation of China (Grant Nos. 61574109 and 61204092).

Li Cong^†, Yan Zhi-Rui, Zhuang Yi-Qi, Zhao Xiao-Long, Guo Jia-Min

(color online) Simulated transfer curves of the GL-TFET with different channel thicknesses T_tunl at V_ds = 1.0 V. The curves are shifted so that the gate voltage where the steepest sub-threshold slope occurs is at the origin.