Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric<xref rid="cpb_27_7_078502_fn1" ref-type="fn">*</xref> <fn id="cpb_27_7_078502_fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant Nos. 61574109 and 61204092).</p> </fn>

Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric* *

Project supported by the National Natural Science Foundation of China (Grant Nos. 61574109 and 61204092).

Li Cong^†, Yan Zhi-Rui, Zhuang Yi-Qi, Zhao Xiao-Long, Guo Jia-Min

(color online) Simulated distributions of BTBT tunneling rate of (a) L-TFET with low-κ dielectric, (b) L-TFET with high-κ dielectric, (c) L-TFET with Ge-source and low-κ dielectric, (d) L-TFET with Ge-source and high-κ dielectric at V_ds = 1.0 V and V_gs = 1.0 V.