Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric<xref rid="cpb_27_7_078502_fn1" ref-type="fn">*</xref> <fn id="cpb_27_7_078502_fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant Nos. 61574109 and 61204092).</p> </fn>

Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric* *

Project supported by the National Natural Science Foundation of China (Grant Nos. 61574109 and 61204092).

Li Cong^†, Yan Zhi-Rui, Zhuang Yi-Qi, Zhao Xiao-Long, Guo Jia-Min

(color online) Simulated transfer characteristics of the L-TFET with low-κ dielectric, L-TFET with high-κ dielectric, L-TFET with Ge-source and low-κ dielectric, and L-TFET with Ge-source and high-κ dielectric. The curves are shifted so that the gate voltage where the steepest sub-threshold slope occurs is at the origin.