Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric<xref rid="cpb_27_7_078502_fn1" ref-type="fn">*</xref> <fn id="cpb_27_7_078502_fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant Nos. 61574109 and 61204092).</p> </fn>

Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric* *

Project supported by the National Natural Science Foundation of China (Grant Nos. 61574109 and 61204092).

Li Cong^†, Yan Zhi-Rui, Zhuang Yi-Qi, Zhao Xiao-Long, Guo Jia-Min

(color online) Virtual fabrication process flow of the GHL-TFET. (a) Recessing the silicon layer. (b) Growing Ge epitaxial layer for the source region with in situ doping. (c) Depositing oxide hard mask. (d) Depositing thin silicon channel by SEG. (e) Depositing HfO₂ by ALD. (f) Etching away the HfO₂ on the right. (g) Depositing SiO₂ by ALD and forming the gate by a high-κ metal stack process. (h) Forming the drain region by ion implantation.