Ge/Si heterojunction L-shape tunnel field-effect transistors with hetero-gate-dielectric*

Project supported by the National Natural Science Foundation of China (Grant Nos. 61574109 and 61204092).

Li Cong, Yan Zhi-Rui, Zhuang Yi-Qi, Zhao Xiao-Long, Guo Jia-Min
       

(color online) Simulated transfer curves of the GHL-TFET with different SiO2 gate dielectric thicknesses (Tox) at Vds = 1.5 V.