Dependence of single event upsets sensitivity of low energy proton on test factors in 65 nm SRAM<xref rid="cpb_27_7_078501_fn1" ref-type="fn">*</xref> <fn id="cpb_27_7_078501_fn1"> <label>*</label> <p>Project supported by the Major Program of the National Natural Science Foundation of China (Grant Nos. 11690040 and 11690043).</p> </fn>

Dependence of single event upsets sensitivity of low energy proton on test factors in 65 nm SRAM* *

Project supported by the Major Program of the National Natural Science Foundation of China (Grant Nos. 11690040 and 11690043).

Luo Yin-Yong^†, Zhang Feng-Qi, Pan Xiao-Yu, Guo Hong-Xia, Wang Yuan-Ming

(color online) Normalized integral probability count versus proton energy reaching the sensitive region after protons with different initial energies passing through Al foils of different thicknesses and metallization layers. (a) The initial proton energy of 1.2 MeV; (b) the initial proton energy of 3 MeV.