Optoelectronic properties of single-crystalline GaInAsSb quaternary alloy nanowires<xref rid="cpb_27_7_078101_fn1" ref-type="fn">*</xref> <fn id="cpb_27_7_078101_fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant Nos. 51525202, 61505051, 1137049, 61474040, and 61635001), the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China, and the Fundamental Research Funds for the Central Universities, China.</p> </fn>

Optoelectronic properties of single-crystalline GaInAsSb quaternary alloy nanowires* *

Project supported by the National Natural Science Foundation of China (Grant Nos. 51525202, 61505051, 1137049, 61474040, and 61635001), the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China, and the Fundamental Research Funds for the Central Universities, China.

Li Meng-Zi, Chen Xin-Liang, Li Hong-Lai, Zhang Xue-Hong, Qi Zhao-Yang, Wang Xiao-Xia, Fan Peng, Zhang Qing-Lin, Zhu Xiao-Li^†, Zhuang Xiu-Juan^‡

(color online) (a) Schematic image of Ga_0.75In_0.25As_0.49Sb_0.51 nanowire PDs. (b) I–V curves of the device under 980 nm illumination at different light intensities. The inset shows the SEM image of a fabricated PD, scale bar: 1 μm. (c) Light intensity-dependence of the photocurrent at V_DS = 1.0 V. (d) Spectral responsivity R and EQE as functions of light intensity at V_DS = 1.0 V, respectively.