Optoelectronic properties of single-crystalline GaInAsSb quaternary alloy nanowires<xref rid="cpb_27_7_078101_fn1" ref-type="fn">*</xref> <fn id="cpb_27_7_078101_fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant Nos. 51525202, 61505051, 1137049, 61474040, and 61635001), the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China, and the Fundamental Research Funds for the Central Universities, China.</p> </fn>

Optoelectronic properties of single-crystalline GaInAsSb quaternary alloy nanowires* *

Project supported by the National Natural Science Foundation of China (Grant Nos. 51525202, 61505051, 1137049, 61474040, and 61635001), the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China, and the Fundamental Research Funds for the Central Universities, China.

Li Meng-Zi, Chen Xin-Liang, Li Hong-Lai, Zhang Xue-Hong, Qi Zhao-Yang, Wang Xiao-Xia, Fan Peng, Zhang Qing-Lin, Zhu Xiao-Li^†, Zhuang Xiu-Juan^‡

(color online) (a) The Raman spectrum of the Ga_0.75In_0.25As_0.49Sb_0.51 nanowire. (b) The PL spectrum of Ga_0.75In_0.25As_0.49Sb_0.51 nanowires at 77 K.