Optoelectronic properties of single-crystalline GaInAsSb quaternary alloy nanowires*

Project supported by the National Natural Science Foundation of China (Grant Nos. 51525202, 61505051, 1137049, 61474040, and 61635001), the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China, and the Fundamental Research Funds for the Central Universities, China.
Li Meng-Zi, Chen Xin-Liang, Li Hong-Lai, Zhang Xue-Hong, Qi Zhao-Yang, Wang Xiao-Xia, Fan Peng, Zhang Qing-Lin, Zhu Xiao-Li †, Zhuang Xiu-Juan ‡
       

(color online) (a) TEM image of a representative single GaInAsSb nanowire. (b) HRTEM image taken from the red rectangle of (a), the insert is the diffraction pattern converted by fast-Fourier transform where the zone axis [11¯0]ZB can be identified. (c) Corresponding EDX profiles measured at the red dot of the nanowire. (d) The 2D elemental mapping of the four detected elements Ga, In, As, and Sb.