Optoelectronic properties of single-crystalline GaInAsSb quaternary alloy nanowires<xref rid="cpb_27_7_078101_fn1" ref-type="fn">*</xref> <fn id="cpb_27_7_078101_fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant Nos. 51525202, 61505051, 1137049, 61474040, and 61635001), the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China, and the Fundamental Research Funds for the Central Universities, China.</p> </fn>

Optoelectronic properties of single-crystalline GaInAsSb quaternary alloy nanowires* *

Project supported by the National Natural Science Foundation of China (Grant Nos. 51525202, 61505051, 1137049, 61474040, and 61635001), the Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province, China, and the Fundamental Research Funds for the Central Universities, China.

Li Meng-Zi, Chen Xin-Liang, Li Hong-Lai, Zhang Xue-Hong, Qi Zhao-Yang, Wang Xiao-Xia, Fan Peng, Zhang Qing-Lin, Zhu Xiao-Li^†, Zhuang Xiu-Juan^‡

(color online) (a) SEM image of the as-grown nanowires. Inset: high-resolution SEM image of a single nanowire with catalyst. (b) The XRD pattern of the as-deposited alloy nanowires.