Intrinsic charge transport behaviors in graphene-black phosphorus van der Waals heterojunction devices<xref rid="cpb_27_7_077303fn1" ref-type="fn">*</xref><fn id="cpb_27_7_077303fn1"> <label>*</label><p>Project supported by the National Basic Research Program of China (Grant No. 2013CBA01600), the National Key Research & Development Project of China (Grant No. 2016YFA0202300), the National Natural Science Foundation of China (Grant Nos. 61474141, 61674170, 61335006, 61390501, 51325204, and 51210003), Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 20150005), and the China Postdoctoral Science Foundation (Grant No. 2017M623146).</p></fn>

Intrinsic charge transport behaviors in graphene-black phosphorus van der Waals heterojunction devices* *

Project supported by the National Basic Research Program of China (Grant No. 2013CBA01600), the National Key Research & Development Project of China (Grant No. 2016YFA0202300), the National Natural Science Foundation of China (Grant Nos. 61474141, 61674170, 61335006, 61390501, 51325204, and 51210003), Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 20150005), and the China Postdoctoral Science Foundation (Grant No. 2017M623146).

Wang Guo-Cai^{1, 2}, Wu Liang-Mei^{1, 2}, Yan Jia-Hao^{1, 2}, Zhou Zhang^{1, 2}, Ma Rui-Song^{1, 2}, Yang Hai-Fang^{1, 2}, Li Jun-Jie^{1, 2}, Gu Chang-Zhi^{1, 2}, Bao Li-Hong^{1, 2, †}, Du Shi-Xuan^{1, 2}, Gao Hong-Jun^{1, 2}

(color online) (a) Plots of I_ds as a function of T² at different V_bg from −40 V to 0 V at a step of 10 V. (b) Plots of T_Tunnel as a function of V_bg. (c) Plots of I_ds as a function of T² at V_bg from 20 V to 40 V at a step of 10 V. (d) Plots of T_Tunnel as a function of V_bg.