Intrinsic charge transport behaviors in graphene-black phosphorus van der Waals heterojunction devices<xref rid="cpb_27_7_077303fn1" ref-type="fn">*</xref><fn id="cpb_27_7_077303fn1"> <label>*</label><p>Project supported by the National Basic Research Program of China (Grant No. 2013CBA01600), the National Key Research & Development Project of China (Grant No. 2016YFA0202300), the National Natural Science Foundation of China (Grant Nos. 61474141, 61674170, 61335006, 61390501, 51325204, and 51210003), Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 20150005), and the China Postdoctoral Science Foundation (Grant No. 2017M623146).</p></fn>

Intrinsic charge transport behaviors in graphene-black phosphorus van der Waals heterojunction devices* *

Project supported by the National Basic Research Program of China (Grant No. 2013CBA01600), the National Key Research & Development Project of China (Grant No. 2016YFA0202300), the National Natural Science Foundation of China (Grant Nos. 61474141, 61674170, 61335006, 61390501, 51325204, and 51210003), Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 20150005), and the China Postdoctoral Science Foundation (Grant No. 2017M623146).

Wang Guo-Cai^{1, 2}, Wu Liang-Mei^{1, 2}, Yan Jia-Hao^{1, 2}, Zhou Zhang^{1, 2}, Ma Rui-Song^{1, 2}, Yang Hai-Fang^{1, 2}, Li Jun-Jie^{1, 2}, Gu Chang-Zhi^{1, 2}, Bao Li-Hong^{1, 2, †}, Du Shi-Xuan^{1, 2}, Gao Hong-Jun^{1, 2}

(color online) (a) Transfer curves of the heterojunction device at different temperatures from 100 K to 300 K at a step of 20 K under a constant bias voltage V_ds = 100 mV. (b) I_on/I_off of the heterojunction devices for electrons conduction (red circles) and holes conduction (black squares) at different temperatures. (c) The gate voltages for the OFF states (V_off) of the heterojunction devices at different temperatures. (d) and (e) Arrhenius plot of ln(I_sat/T²) versus q/K_BT at different back gate voltages from −40 V to 0 V and from 10 V to 40 V at a step of 10 V, respectively. (f) Extracted Schottky barrier height as a function of the gate voltage.