Intrinsic charge transport behaviors in graphene-black phosphorus van der Waals heterojunction devices*

Project supported by the National Basic Research Program of China (Grant No. 2013CBA01600), the National Key Research & Development Project of China (Grant No. 2016YFA0202300), the National Natural Science Foundation of China (Grant Nos. 61474141, 61674170, 61335006, 61390501, 51325204, and 51210003), Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 20150005), and the China Postdoctoral Science Foundation (Grant No. 2017M623146).

Wang Guo-Cai1, 2, Wu Liang-Mei1, 2, Yan Jia-Hao1, 2, Zhou Zhang1, 2, Ma Rui-Song1, 2, Yang Hai-Fang1, 2, Li Jun-Jie1, 2, Gu Chang-Zhi1, 2, Bao Li-Hong1, 2, †, Du Shi-Xuan1, 2, Gao Hong-Jun1, 2
       

(color online) (a) Output curves of the graphene device with Vds ranging from −100 mV to 100 mV at different Vbg from −50 V to 50 V at a step of 10 V. (b) and (c) Output curves of the BP device with Vds ranging from −1 V to 1 V at Vbg from −20 V to 0 V and from 10 V to 20 V at a step of 5 V, respectively. (d) and (e) Output curves of the graphene/BP heterojunction device with Vds ranging from −1 V to 1 V at Vbg from −40 V to 0 V and from 10 V to 50 V at a step of 10 V, respectively. (f) Transfer curves of the graphene device (black),the graphene/BP heterojunction device (red), and the BP device (blue) with Vds = 10 mV. (g) Schematic of the energy band diagram of the heterojunction device at different Vbg regimes.