Electronic properties of silicene in BN/silicene van der Waals heterostructures<xref rid="cpb_27_7_077302fn1" ref-type="fn">*</xref><fn id="cpb_27_7_077302fn1"> <label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0202300), the National Natural Science Foundation of China (Grant Nos. 61390501 and 61471337), the National Basic Research Program of China (Grant No. 2013CBA01600), the CAS Pioneer Hundred Talents Program, and the Beijing Nova Program, China (Grant No. Z181100006218023).</p></fn>

Electronic properties of silicene in BN/silicene van der Waals heterostructures* *

Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0202300), the National Natural Science Foundation of China (Grant Nos. 61390501 and 61471337), the National Basic Research Program of China (Grant No. 2013CBA01600), the CAS Pioneer Hundred Talents Program, and the Beijing Nova Program, China (Grant No. Z181100006218023).

Wu Ze-Bin^{1, 2}, Zhang Yu-Yang^{1, 2}, Li Geng^{1, 2}, Du Shixuan^{1, 2, †}, Gao Hong-Jun^{1, 2}

(color online) Silicene sandwiched by other 2D materials with the Dirac cones opened. (a) Left panel: sandwich heterostructure with silicene in the middle. Right panel: unit cells of cladding layers. (b)–(d) Projected energy band structures of Gr/Si/BN and BCN/Si/BCN sandwich heterostructures. Contributions of silicene and cladding layers are quantitatively indicated by red-grey color scale, where a 100% contribution from silicene is marked by pure red. (e) Silicene sandwiched by HfO₂. (f) The projected energy band structure of HfO₂/Si/HfO₂.