Electronic properties of silicene in BN/silicene van der Waals heterostructures<xref rid="cpb_27_7_077302fn1" ref-type="fn">*</xref><fn id="cpb_27_7_077302fn1"> <label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0202300), the National Natural Science Foundation of China (Grant Nos. 61390501 and 61471337), the National Basic Research Program of China (Grant No. 2013CBA01600), the CAS Pioneer Hundred Talents Program, and the Beijing Nova Program, China (Grant No. Z181100006218023).</p></fn>

Electronic properties of silicene in BN/silicene van der Waals heterostructures* *

Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0202300), the National Natural Science Foundation of China (Grant Nos. 61390501 and 61471337), the National Basic Research Program of China (Grant No. 2013CBA01600), the CAS Pioneer Hundred Talents Program, and the Beijing Nova Program, China (Grant No. Z181100006218023).

Wu Ze-Bin^{1, 2}, Zhang Yu-Yang^{1, 2}, Li Geng^{1, 2}, Du Shixuan^{1, 2, †}, Gao Hong-Jun^{1, 2}

(color online) Quasi-free-standing silicene in superlattices. (a) Unit cell and the first Brillouin zone of the BN/silicene superlattices. (b)–(d) Energy band structures of the superlattices, differing from each other by the number of BN layers between adjacent silicene layers, from one to three.