Electronic properties of silicene in BN/silicene van der Waals heterostructures<xref rid="cpb_27_7_077302fn1" ref-type="fn">*</xref><fn id="cpb_27_7_077302fn1"> <label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0202300), the National Natural Science Foundation of China (Grant Nos. 61390501 and 61471337), the National Basic Research Program of China (Grant No. 2013CBA01600), the CAS Pioneer Hundred Talents Program, and the Beijing Nova Program, China (Grant No. Z181100006218023).</p></fn>

Electronic properties of silicene in BN/silicene van der Waals heterostructures* *

Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0202300), the National Natural Science Foundation of China (Grant Nos. 61390501 and 61471337), the National Basic Research Program of China (Grant No. 2013CBA01600), the CAS Pioneer Hundred Talents Program, and the Beijing Nova Program, China (Grant No. Z181100006218023).

Wu Ze-Bin^{1, 2}, Zhang Yu-Yang^{1, 2}, Li Geng^{1, 2}, Du Shixuan^{1, 2, †}, Gao Hong-Jun^{1, 2}

(color online) Top views and energy band structures of BN/Si/BN/Si/BN with different stacking configurations of silicene layers. To highlight the silicene layers, BN layers are shown in line style and the two silicene layers are colored by red and yellow respectively. The silicene layer colored in red is kept still and below. Two sub-lattices of silicene are indicated by different sizes of the balls that the larger balls represent the higher atoms in this top view. (a) and (b) The band structure of A-A stacking configuration. (c)–(e) The band structure of A-B stacking configuration.