Electronic properties of silicene in BN/silicene van der Waals heterostructures<xref rid="cpb_27_7_077302fn1" ref-type="fn">*</xref><fn id="cpb_27_7_077302fn1"> <label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0202300), the National Natural Science Foundation of China (Grant Nos. 61390501 and 61471337), the National Basic Research Program of China (Grant No. 2013CBA01600), the CAS Pioneer Hundred Talents Program, and the Beijing Nova Program, China (Grant No. Z181100006218023).</p></fn>

Electronic properties of silicene in BN/silicene van der Waals heterostructures* *

Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0202300), the National Natural Science Foundation of China (Grant Nos. 61390501 and 61471337), the National Basic Research Program of China (Grant No. 2013CBA01600), the CAS Pioneer Hundred Talents Program, and the Beijing Nova Program, China (Grant No. Z181100006218023).

Wu Ze-Bin^{1, 2}, Zhang Yu-Yang^{1, 2}, Li Geng^{1, 2}, Du Shixuan^{1, 2, †}, Gao Hong-Jun^{1, 2}

(color online) Coupling between silicene layers intercalated by BN layers. (a) Supercell of a 2D vdWHs with two silicene layers encapsulated inside but separated by N BN layers. (b) Energy band structure of supercell shown in (a) with N = 1. (c) Partial charge density near the Fermi level (E_F ± 0.3 eV) related to the band structure shown in (b). (d) and (e) Energy band structures of the supercell shown in (a) with N = 2 and 3, respectively.