Metal-to-insulator transition in two-dimensional ferromagnetic monolayer induced by substrate<xref rid="cpb_27_7_077106_fn1" ref-type="fn">*</xref><fn id="cpb_27_7_077106_fn1"> <label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant No. 11574223), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20150303), and the Jiangsu Specially-Appointed Professor Program of Jiangsu Province, China.</p></fn>

Metal-to-insulator transition in two-dimensional ferromagnetic monolayer induced by substrate* *

Project supported by the National Natural Science Foundation of China (Grant No. 11574223), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK20150303), and the Jiangsu Specially-Appointed Professor Program of Jiangsu Province, China.

Qi Can^{1, 2}, Hu Jun^{1, 2, †}

(color online) (a) Spin density of TaTe/Al₂O₃(0001) with cutoff of ±0.3 e/Å³. Top panel: parallel to the surface and crossing the Ta atoms; bottom panel: perpendicular to the TaTe monolayer and crossing one of the Ta–Te bonds. (b)–(d) Band structures of (a) TaS/Al₂O₃(0001), (b) TaSe/Al₂O₃(0001), and (c) TaTe/Al₂O₃(0001). The black and red curves stand for bands in majority and minority spin channels, respectively. The horizontal dashed lines indicate the Fermi energy.