Growth and transport properties of topological insulator Bi2Se3 thin film on a ferromagnetic insulating substrate<xref rid="cpb_27_7_076801fn1" ref-type="fn">*</xref><fn id="cpb_27_7_076801fn1"> <label>*</label>Project supported by the National Key R&D Program of China (Grant Nos. 2016YFA0300904 and 2016YFA0202301), the National Natural Science Foundation of China (Grant Nos. 11334011, 11674366, 11674368, and 11761141013), and the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant Nos. XDB07010200 and XDPB06).</fn>

Growth and transport properties of topological insulator Bi₂Se₃ thin film on a ferromagnetic insulating substrate* *

Project supported by the National Key R&D Program of China (Grant Nos. 2016YFA0300904 and 2016YFA0202301), the National Natural Science Foundation of China (Grant Nos. 11334011, 11674366, 11674368, and 11761141013), and the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant Nos. XDB07010200 and XDPB06).

Zhu Shanna^{1, 2}, Shi Gang^{1, 2}, Zhao Peng^{1, 2}, Meng Dechao^{3, 4}, Liang Genhao³, Zhai Xiaofang^{3, 5}, Lu Yalin^{3, 5, 6}, Li Yongqing¹, Chen Lan^{1, 2, †}, Wu Kehui^{1, 2, 7, ‡}

Magnetotransport properties of the Bi₂Se₃/LCO heretostructure devices. All the data are measured at 1.7 K. (a) Hall resistance (R_xy) of several Bi₂Se₃/LCO samples as a function of the perpendicular magnetic field. (b) Initial carrier density (black squares) and carrier mobility (red circles) derived from several Bi₂Se₃/LCO samples grown at different substrate temperatures (denoted by T_sub) ranging from 150 °C to 225 °C. (c) Magnetoresistance (MR) measured in perpendicular magnetic field of four Bi₂Se₃/LCO samples (in solid symbols) grown at T_sub = 150 °C, 175 °C, 200 °C, 225 °C, respectively, and a control sample (in pink open symbol) of Bi₂Se₃/STO grown at T_sub = 150 °C. (d) Magnetoconductivity in low-field range of the corresponding samples in (c) as well as two additional curves of the Bi₂Se₃/STO control sample with T_sub = 150 °C at gate voltage 30 V and −100 V, respectively. The HLN fitting results of each curve are plotted in solid (orange) lines. (e) The fitting parameters of HLN equation for each Bi₂Se₃/LCO sample shown in (d). (f) MR of a typical Bi₂Se₃/LCO sample grown at optimal T_sub = 150 °C measured in tilted field. The tilted angle is defined as the angle between the applied magnetic field and the film plane.