Growth and transport properties of topological insulator Bi2Se3 thin film on a ferromagnetic insulating substrate*

Project supported by the National Key R&D Program of China (Grant Nos. 2016YFA0300904 and 2016YFA0202301), the National Natural Science Foundation of China (Grant Nos. 11334011, 11674366, 11674368, and 11761141013), and the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant Nos. XDB07010200 and XDPB06).

Zhu Shanna1, 2, Shi Gang1, 2, Zhao Peng1, 2, Meng Dechao3, 4, Liang Genhao3, Zhai Xiaofang3, 5, Lu Yalin3, 5, 6, Li Yongqing1, Chen Lan1, 2, †, Wu Kehui1, 2, 7, ‡
       

AFM images (size: 1 μm × 1 μm) of Bi2Se3 film grown on SrTiO3(001) substrate at different substrate temperatures: (a) 150 °C, (b) 190 °C, (c) 210 °C, and (d) 230 °C. All the films have been grown for 60 min, under the same conditions as that in Fig. 3.