Growth and transport properties of topological insulator Bi2Se3 thin film on a ferromagnetic insulating substrate<xref rid="cpb_27_7_076801fn1" ref-type="fn">*</xref><fn id="cpb_27_7_076801fn1"> <label>*</label>Project supported by the National Key R&D Program of China (Grant Nos. 2016YFA0300904 and 2016YFA0202301), the National Natural Science Foundation of China (Grant Nos. 11334011, 11674366, 11674368, and 11761141013), and the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant Nos. XDB07010200 and XDPB06).</fn>

Growth and transport properties of topological insulator Bi₂Se₃ thin film on a ferromagnetic insulating substrate* *

Project supported by the National Key R&D Program of China (Grant Nos. 2016YFA0300904 and 2016YFA0202301), the National Natural Science Foundation of China (Grant Nos. 11334011, 11674366, 11674368, and 11761141013), and the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant Nos. XDB07010200 and XDPB06).

Zhu Shanna^{1, 2}, Shi Gang^{1, 2}, Zhao Peng^{1, 2}, Meng Dechao^{3, 4}, Liang Genhao³, Zhai Xiaofang^{3, 5}, Lu Yalin^{3, 5, 6}, Li Yongqing¹, Chen Lan^{1, 2, †}, Wu Kehui^{1, 2, 7, ‡}

X-ray diffraction spectrum of a 20 QL Bi₂Se₃ film on LaCoO₃/SrTiO₃(001) (red line) and the data of an as-prepared LaCoO₃ film on SrTiO₃(001) substrate (black line) for comparison. The standard data (ICSD card) of Bi₂Se₃ single crystal is also shown (marked as orange star symbols) as a reference.