Growth and transport properties of topological insulator Bi2Se3 thin film on a ferromagnetic insulating substrate<xref rid="cpb_27_7_076801fn1" ref-type="fn">*</xref><fn id="cpb_27_7_076801fn1"> <label>*</label>Project supported by the National Key R&D Program of China (Grant Nos. 2016YFA0300904 and 2016YFA0202301), the National Natural Science Foundation of China (Grant Nos. 11334011, 11674366, 11674368, and 11761141013), and the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant Nos. XDB07010200 and XDPB06).</fn>

Growth and transport properties of topological insulator Bi₂Se₃ thin film on a ferromagnetic insulating substrate* *

Project supported by the National Key R&D Program of China (Grant Nos. 2016YFA0300904 and 2016YFA0202301), the National Natural Science Foundation of China (Grant Nos. 11334011, 11674366, 11674368, and 11761141013), and the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant Nos. XDB07010200 and XDPB06).

Zhu Shanna^{1, 2}, Shi Gang^{1, 2}, Zhao Peng^{1, 2}, Meng Dechao^{3, 4}, Liang Genhao³, Zhai Xiaofang^{3, 5}, Lu Yalin^{3, 5, 6}, Li Yongqing¹, Chen Lan^{1, 2, †}, Wu Kehui^{1, 2, 7, ‡}

RHEED patterns recorded during the deposition of Bi₂Se₃ film on LaCoO₃ substrate. (a) The surface of LaCoO₃ thin film after degassing, and before the Bi₂Se₃ film growth. (b), (c), and (d) were taken when the Bi₂Se₃ film has grown for 10 min (3 QL), 20 min (6 QL), and 60 min (18 QL), respectively.