Investigation of flux dependent sensitivity on single event effect in memory devices<xref rid="cpb_27_7_076101_fn1" ref-type="fn">*</xref><fn id="cpb_27_7_076101_fn1"> <label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. U1532261, 11690041, and 11675233).</p></fn>

Investigation of flux dependent sensitivity on single event effect in memory devices* *

Project supported by the National Natural Science Foundation of China (Grant Nos. U1532261, 11690041, and 11675233).

Luo Jie^{1, 2, 3}, Wang Tie-shan², Li Dong-qing¹, Liu Tian-qi¹, Hou Ming-dong¹, Sun You-mei¹, Duan Jing-lai¹, Yao Hui-jun¹, Xi Kai¹, Ye Bing¹, Liu Jie^{1, †}

(color online) GEANT4 simulations of the radial pair density profile generated by 1020 MeV ²⁰⁹Bi ion, 550 MeV ¹²⁹Xe ions, and 240 MeV ⁸⁶Kr ion. The corresponding LETs are 99.8 MeV·cm²/mg, 69.1 MeV·cm²/mg, and 40.7 MeV·cm²/mg, respectively.