Investigation of flux dependent sensitivity on single event effect in memory devices<xref rid="cpb_27_7_076101_fn1" ref-type="fn">*</xref><fn id="cpb_27_7_076101_fn1"> <label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. U1532261, 11690041, and 11675233).</p></fn>

Investigation of flux dependent sensitivity on single event effect in memory devices* *

Project supported by the National Natural Science Foundation of China (Grant Nos. U1532261, 11690041, and 11675233).

Luo Jie^{1, 2, 3}, Wang Tie-shan², Li Dong-qing¹, Liu Tian-qi¹, Hou Ming-dong¹, Sun You-mei¹, Duan Jing-lai¹, Yao Hui-jun¹, Xi Kai¹, Ye Bing¹, Liu Jie^{1, †}

(color online) Schematic representation of the NMOS transistor with 50 nm gate length. The ion incidents in the middle of the drain area (black arrow).