Integration of a field-effect-transistor terahertz detector with a diagonal horn antenna<xref rid="cpb_27_6_068506_fn1" ref-type="fn">*</xref> <fn id="cpb_27_6_068506_fn1"> <label>*</label> <p>Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFF0100501 and 2016YFC0801203), the National Natural Science Foundation of China (Grant Nos. 61611530708, 11403084, 61401456, 61401297, and 61505242), the Six Talent Peaks Project of Jiangsu Province, China (Grant No. XXRJ-079), the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2017372), and the Russian Foundation for Basic Research (Grant No. 17-52-53063).</p> </fn>

Integration of a field-effect-transistor terahertz detector with a diagonal horn antenna* *

Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFF0100501 and 2016YFC0801203), the National Natural Science Foundation of China (Grant Nos. 61611530708, 11403084, 61401456, 61401297, and 61505242), the Six Talent Peaks Project of Jiangsu Province, China (Grant No. XXRJ-079), the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2017372), and the Russian Foundation for Basic Research (Grant No. 17-52-53063).

Li Xiang^{1, 2}, Sun Jian-dong^{2, †}, Zhang Zhi-peng², Popov V V³, Qin Hua^{2, ‡}

(color online) (a) Terahertz photocurrent from the integrated detector and the bare detector. The enhancement factor for the integrated detector is plotted to the right axis. (b) Noise-equivalent power (NEP) for the same detector with and without the horn antenna integrated. (c) Measured responsivity for the integrated detector in comparison with the simulated overall antenna factor (dashed curve).