Integration of a field-effect-transistor terahertz detector with a diagonal horn antenna<xref rid="cpb_27_6_068506_fn1" ref-type="fn">*</xref> <fn id="cpb_27_6_068506_fn1"> <label>*</label> <p>Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFF0100501 and 2016YFC0801203), the National Natural Science Foundation of China (Grant Nos. 61611530708, 11403084, 61401456, 61401297, and 61505242), the Six Talent Peaks Project of Jiangsu Province, China (Grant No. XXRJ-079), the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2017372), and the Russian Foundation for Basic Research (Grant No. 17-52-53063).</p> </fn>

Integration of a field-effect-transistor terahertz detector with a diagonal horn antenna* *

Project supported by the National Key Research and Development Program of China (Grant Nos. 2016YFF0100501 and 2016YFC0801203), the National Natural Science Foundation of China (Grant Nos. 61611530708, 11403084, 61401456, 61401297, and 61505242), the Six Talent Peaks Project of Jiangsu Province, China (Grant No. XXRJ-079), the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2017372), and the Russian Foundation for Basic Research (Grant No. 17-52-53063).

Li Xiang^{1, 2}, Sun Jian-dong^{2, †}, Zhang Zhi-peng², Popov V V³, Qin Hua^{2, ‡}

(color online) (a) Overview of the simulated energy flux density (J₀) in the horn antenna at 340 GHz. (b) Simulated energy flux density at the waveguide port of the diagonal horn at 340 GHz. (c) Experimental energy flux density of the terahertz beam at 340 GHz focused by a 3″ off-axis parabolic mirror. (d) Simulated horn-antenna factor (F_H) and on-chip-antenna factor (Λ) as a function of the frequency. The unit a.u. is short for arbtrary units.