Physics-based analysis and simulation model of electromagnetic interference induced soft logic upset in CMOS inverter<xref rid="cpb_27_6_068505_fn1" ref-type="fn">*</xref> <fn id="cpb_27_6_068505_fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant No. 60776034) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (Grant No. 2015-0214.XY.K).</p> </fn>

Physics-based analysis and simulation model of electromagnetic interference induced soft logic upset in CMOS inverter* *

Project supported by the National Natural Science Foundation of China (Grant No. 60776034) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (Grant No. 2015-0214.XY.K).

Liu Yu-Qian^{1, †}, Chai Chang-Chun¹, Zhang Yu-Hang², Shi Chun-Lei¹, Liu Yang¹, Fan Qing-Yang¹, Yang Yin-Tang¹

(color online) Device simulation results of low level input electron concentrations at (a) original size and no EMI, (b) original size and 24-dBm EMI, (c) half size and 24-dBm EMI. The inset shows the electron concentrations in NMOS channels.