Degradation of current–voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors<xref rid="cpb_27_6_068504_fn1" ref-type="fn">*</xref><fn id="cpb_27_6_068504_fn1"><label>*</label><p>Project supported by the Opening Fund of Key Laboratory of Silicon Device Technology, Chinese Academy of Sciences (Grant No. KLSDTJJ2018-6), the National Natural Science Foundation of China (Grant No. 61574048), the Science and Technology Research Project of Guangdong Province, China (Grant No. 2015B090912002), and the Pearl River S & T Nova Program of Guangzhou City, China (Grant No. 201710010172).</p></fn>

Degradation of current–voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors**

Project supported by the Opening Fund of Key Laboratory of Silicon Device Technology, Chinese Academy of Sciences (Grant No. KLSDTJJ2018-6), the National Natural Science Foundation of China (Grant No. 61574048), the Science and Technology Research Project of Guangdong Province, China (Grant No. 2015B090912002), and the Pearl River S & T Nova Program of Guangzhou City, China (Grant No. 201710010172).

Wang Li^{1, 2, 3}, Liu Yuan^{1, 2, 3, †}, Geng Kui-Wei¹, Chen Ya-Yi^{1, 2}, En Yun-Fei²

(color online) Spatial distributions of oxide trapped charge density in gate oxide before and after stress.