Degradation of current–voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors Project supported by the Opening Fund of Key Laboratory of Silicon Device Technology, Chinese Academy of Sciences (Grant No. KLSDTJJ2018-6), the National Natural Science Foundation of China (Grant No. 61574048), the Science and Technology Research Project of Guangdong Province, China (Grant No. 2015B090912002), and the Pearl River S & T Nova Program of Guangzhou City, China (Grant No. 201710010172). |
(color online) Curves of normalized noise versus drain current power spectral density after NBIS. |
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