Enhancement of off-state characteristics in junctionless field effect transistor using a field plate<xref rid="cpb_27_6_067402_fn1" ref-type="fn">*</xref> <fn id="cpb_27_6_067402_fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant No. 61704130), the Fundamental Research Funds for the Central Universities, China (Grant No. 20101166085) and the Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology from Institute of Microelectronics, Chinese Academy of Sciences (Grant No. 90109162905).</p> </fn>

Enhancement of off-state characteristics in junctionless field effect transistor using a field plate* *

Project supported by the National Natural Science Foundation of China (Grant No. 61704130), the Fundamental Research Funds for the Central Universities, China (Grant No. 20101166085) and the Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology from Institute of Microelectronics, Chinese Academy of Sciences (Grant No. 90109162905).

Wang Bin^{1, †}, Zhang He-Ming², Hu Hui-Yong², Shi Xiao-Wei¹

(color online) (a) I_D–V_G characteristics of conventional MOSFET, normal JLFET, and FP JLFET at V_DS = 1.0 V. (b) Comparisons of I_on, I_off, I_on/I_off, and SS among conventional MOSFET, normal JLFET, and FP JLFET.