Enhancement of off-state characteristics in junctionless field effect transistor using a field plate<xref rid="cpb_27_6_067402_fn1" ref-type="fn">*</xref> <fn id="cpb_27_6_067402_fn1"> <label>*</label> <p>Project supported by the National Natural Science Foundation of China (Grant No. 61704130), the Fundamental Research Funds for the Central Universities, China (Grant No. 20101166085) and the Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology from Institute of Microelectronics, Chinese Academy of Sciences (Grant No. 90109162905).</p> </fn>

Enhancement of off-state characteristics in junctionless field effect transistor using a field plate* *

Project supported by the National Natural Science Foundation of China (Grant No. 61704130), the Fundamental Research Funds for the Central Universities, China (Grant No. 20101166085) and the Opening Project of Key Laboratory of Microelectronic Devices & Integrated Technology from Institute of Microelectronics, Chinese Academy of Sciences (Grant No. 90109162905).

Wang Bin^{1, †}, Zhang He-Ming², Hu Hui-Yong², Shi Xiao-Wei¹

(color online) Plots of electric field along the vertical direction of the channel underneath the gate in the off-state (V_DS = 1.0 V, V_GS = 0 V), with inset showing G_BTBT near the gate edge.